IDT Announces First Glitch-Free RF Digital Step Attenuator with Integrated Blocking Capacitors

IDT’s True Drop-In Replacement DSA Integrates DC-blocking Capacitors to Reduce the Bill-of-materials and Maximize Performance in Base Station and Industrial Applications

Online PR News – 24-April-2013 – SAN JOSE, CA – Integrated Device Technology, Inc. (IDT®) (NASDAQ: IDTI), the Analog and Digital Company™ delivering essential mixed-signal semiconductor solutions, today announced the industry’s first Glitch-Free™ radio frequency (RF) digital step attenuator (DSA) with integrated blocking capacitors. The new DSA is a true drop-in replacement for the most popular DSA footprint, allowing customers to reduce the bill-of-materials (BOM), optimize board area, and improve performance in base station and industrial applications.

The IDTF1953 is a 6-bit RF DSA optimized for the demanding requirements of base transceiver station (BTS) receive, transmit, and digital pre-distortion (DPD) paths. The device is pin- and control-compatible with competitors’ offerings, but integrates blocking capacitors and innovative design techniques to reduce the BOM and improve performance. Built onIDT’s Glitch-Free™ technology platform, the IDTF1953 reduces transient overshoot, or “glitches”, during most significant bit (MSB) transitions by up to 95 percent in multi-standard 4G, 3G, and 2G cellular base station and industrial applications. IDT’s leading DSAsolutions enable customers to simplify their software interface, improve reliability, and prevent damage to expensive sub-assemblies, such as power amplifiers.

“Our innovative DSA is the latest addition to IDT’s rapidly-growing, performance-leading portfolio of RF signal chain products,” said Christian Kermarrec, vice president and general manager of Wireless Systems at IDT. “In addition to 95 percent transient glitch reduction during MSB transitions, our newest DSA eliminates the requirement for series capacitors and includes key features such as latched parallel mode and default state configurability. The device is also a drop-in replacement for existing 20-pin solutions from other vendors, making it an ideal upgrade solution for customers who want to simplify the board and improve system performance at the same time.”

The IDTF1953 operates from 400 MHz to 4000 MHz and covers a 31.5 dB attenuation range in 0.5 dB steps (6-bit). The device features extremely low IM3 distortion for improved DPD path performance, allowing for better transmitter spectral mask compliance and lower power consumption. In addition, the DSAs feature very low insertion loss (< 1.35 dB at 2 GHz) and are extremely accurate (< 0.25 dB over temperature), providing improved sensitivity and signal-to-noise ratio (SNR) in the receiver path.

The device is ideal for setting the power level in 4G long-term evolution (LTE), time-division duplex (TDD), wideband code division multiple access (WCDMA), extended global system for mobile communications (EGSM) and other popular systems. TheDSA enhances IDT’s comprehensive wireless communications portfolio that includes RF mixers, variable gain amplifiers (VGAs),RapidIO® serial switching, industry-leading timing, data conversion and data compression products.
Pricing and Availability

The IDTF1953 is currently sampling to qualified customers and is available in a 4 x 4 mm 20-lead VFQFPN package. For more information about IDT’s RF products, visit

Contact Information
Alyssa Joseph
Integrated Device Technology, Inc.
6024 Silver Creek Valley Road
San Jose CA, 95138